Will be updated soon
Category: Research Area
Silicon Photonics
Centre for Programmable Photonic Integrated Circuits and Systems (CPPICS) is one of the centre of excellence (CoE) initiatives by the Ministry of Electronics and Information Technology (MeitY), Govt. of India. It is hosted by Department of Electrical Engineering, IIT Madras with a long-term mission for catering R&D in the area of programmable photonic integrated circuits and systems using CMOS compatible silicon photonics technology for solving various levels of complex problems. The immediate focus of this CoE is to provide better solutions for microwave and quantum photonics applications such as advanced photonic processors to be used in high-performance RF transceivers, scalable linear optical quantum computing (LOQC) processors for the next generation qubit computation, and chip-level quantum key generation and distribution circuits, etc.
Silicon Photonics: https://cppics.iitm.ac.in/
Memory and Logic Devices
PCM is an emerging memory technology exploits unique feature of chalcogenide-based phase change materials that undergo ultrafast and reversible phase transitions between a highly resistive amorphous state (digital “0”) and a conducting crystalline state (digital “1”) using nanosecond (ns) electrical pulses. Such permanent, yet reversible phase transitions (more than 10 million cycles) are stable over 10 years, ensures non-volatility as well as faster programming (ns) and therefore, PCM is being demonstrated as a strong candidate not only for next generation high speed non-volatile memory but also ‘universal memory’ for future high speed computing devices.
Memory and Logic Devices: https://anbuchalcogen.wixsite.com/anbarasu
Organic Electronics
Organic Electronics
The AMOLED Research Center (ARC) aims in developing next generation AMOLED displays for smartphones, tablets, watches and wearables. The center is a National Center of Excellence and is funded by MeitY, DRDO, and Tata Sons. The center has researchers from various fields working on developing the displays. The center consists of a state-of-the-art cleanroom which houses fabrication and characterization equipment. The center started functioning from April 2021.
AMOLED Research Center URL: https://arc.iitm.ac.in/arc
RF and Optical MEMS
RF MEMS
- Design and Development of SPDT RF MEMS switches for Ku band applications
- RF Oscillators based on MEMS resonators
- Self-aligned double polysilicon emitter Bipolar Technology for RF applications.
RF and Optical MEMS URL: https://www.ee.iitm.ac.in/AppliedOptics/
Gallium Nitride and Wide Band-Gap Device Research
Gallium Nitride and Wide Band-Gap Device Research
Post silicon, Gallium Nitride (GaN) has emerged as the WONDER material that has the potential to disruptively change the future of semiconductor devices. Bolstered by its unique material and device properties, it is finding extensive applications both in power and RF domains; e.g. 5G, Power switches,etc. This technology is expanding to capture the market of electric vehicles, besides being pushed towards application in extreme environments (automobiles, low earth orbit satellites, high temperature and radiation hard application) and even for quantum computing.
At CNNP, GRAND group works towards development of indigenous GaN technologies and systems through detailed physical analysis, to meet the nations need for a sustainable and prosperous future.
GaN GRAND Research
Key Research Areas
- Indigenous development of GaN device technologies for power and RF applications
- Study of gate leakage mechanisms in HEMTs and MIS HEMTs
- Enhancement-mode device using charge engineering in Gate dielectric
- Indigenous technology development of Fin-MISHEMT with positive Vth of 0.63V
- Development of GaN-based Passives for enabling Monolithic Integration
- Design of Spiral Inductors and capacitors to meet the required specifications for GaN based systems, such as power amplifier
- Fabrication and Characterization of Tapered Spiral Inductors
- Creation of library for GaN-based inductors ranging from 0.5 – 2 nH
- Device characterizations and Reliability Analysis of developed GaN-based devices for better reliability-aware designs
- Compact model for HEMTs developed and validated with available experimental data, both in-house and industrial
- Salient features of developed Model
- Unified and continuous expression for 2-DEG charge versus Gate Voltage
- Accurately predicts DC and AC characteristics
- Includes secondary effects in the core model
- Few number of parameters
- Simple parameter extraction strategy
- Publications
- >25 papers in top Journals
- Regular contributions in top conferences
- Total citations >500
- Invited/Keynote Talks
- Invited and keynote talks in several international conferences/workshops
- Manpower Development
- >20 Doctoral and Masters Research scholar trained
- >30 technical staffs trained
- Industrial Collaborations & End Users
- Veeco Instruments Inc., USA
- United Monolithic Semiconductors (UMS), France
- Solid State Physics Laboratory (SSPL), Defence Research & Development Organisation (DRDO), New Delhi, India
- Tejas Networks, India
- Semtronics, UK
- Academic Collaborations
- Purdue University, USA
- University of Limoges and XLIM, CNRS, France
- IEMN, CNRS, France
Our 10 year VISION
- Create a GaN and Wide Band gap material Research Facility comparable to the best in the world doing cutting edge research
- A Centre which will work closely with industry to provide solutions
- A self-sustainable Centre with a large number of faculty and students
- Provide trained manpower for industry
- Scale up our current technologies to meet industry and market demands
- Work towards developing novel and reliable GaN and Wide Band gap material-based technologies